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Fin field effect transistor12/4/2023 Microsyst Technol 24(2):1309–1315īalaji B, Rao KS, Sravani KG et al (2022) Design, performance analysis of GaAs/6H-SiC/AlGaN metal semiconductor FET in submicron technology. Girija SK, Srinivasa Rao K (2018) Analysis of RF MEMS shunt capacitive switch with uniform and non-uniform meanders. Girija Sravani K, Koushik Guha, Srinivasa Rao K (2020) A modified proposed capacitance model for step structure capacitive RF MEMS switch by incorporating fringing field effects. IEEE Access 7:44471–44488Īditya M, Rao KS, Balaji B et al (2022) Comparison of drain current characteristics of advanced MOSFET structures-a review. Sravani KG, Prathyusha D, Rao KS, Kumar PA, Lakshmi GS, Chand CG, Naveena P, Thalluri LN, Guha K (2019) Design and performance analysis of low pull-in voltage of dimple type capacitive RF MEMS shunt switch for Ka-band. Naraiah R, Balaji B, Radhamma E, Udutha R (2019) Delay approximation model for prime speed interconnects in current mode. Sravani SS, Balaji B, Rao KS et al (2022) A Qualitative review on tunnel field effect transistor- operation, advances, and applications. Int J Innov Technol Exploring Eng 217–220 Īditya M, Veeraraghava Rao I, Balaji B, John Philip B, Ajay Nagendra N, Vamsee Krishna S (2019) A Novel Low-Power 5th order Analog to Digital Converter for Biomedical Applications. Kumar PK, Balaji B, Rao KS (2022) Performance analysis of sub 10 nm regime source halo symmetric and asymmetric nanowire MOSFET with underlap engineering. Int J Innov Technol Exploring Eng 8(7):217–220īalaji B, Aditya M, Adithya G, Sai Priyanka M, Ayyappa Vijay VVSSK, Chandu K (2019) Implementation of low-power 1-bit hybrid full adder with reduced area. Aditya M, Rao IV, Balaji B, John Philip B, Ajay Nagendra N, Krishna SV (2019) A novel low-power 5th order analog to digital converter for biomedical applications.
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